1 silicon junction fets (small signal) publication date: july 2003 sjf00037aed 2SK3546J silicon n-channel mosfet for switching features ? high-speed switching ? wide frequency band absolute maximum ratings t a = 25 c parameter symbol conditions min typ max unit drain-source surrender voltage v dss i d = 10 a, v gs = 050 v drain-source cutoff current i dss v ds = 50 v, v gs = 0 1.0 a gate-source cutoff current i gss v gs = 7 v, v ds = 0 5.0 a gate threshold voltage v th i d = 1.0 a, v ds = 3 v 0.9 1.2 1.5 v drain-source on resistance r ds(on) i d = 10 ma, v gs = 2.5 v 8 15 ? i d = 10 ma, v gs = 4.0 v 6 12 forward transfer admittance ? y fs ? i d = 10 ma, v ds = 3 v, f = 1 khz 20 60 ms short-circuit forward transfer capacitance c iss v ds = 3 v, v gs = 0, f = 1 mhz 12 pf (common source) short-circuit output capacitance c oss v ds = 3 v, v gs = 0, f = 1 mhz 7 pf (common source) reverse transfer capacitance c rss v ds = 3 v, v gs = 0, f = 1 mhz 3 pf (common source) turn-on time * t on v dd = 3 v, v gs = 0 v to 3 v, r l = 470 ? 200 ns turn-off time * t off v dd = 3 v, v gs = 3 v to 0 v, r l = 470 ? 200 ns parameter symbol rating unit drain-source voltage v ds 50 v gate-source voltage (drain open) v gso 7v drain current i d 100 ma peak drain current i dp 200 ma power dissipation p d 125 mw channel temperature t ch 125 c storage temperature t stg ? 55 to + 125 c v out v dd = 3 v v gs = 3.0 v 50 ? 470 ? 100 f v in 90% 10% 10% 90% v out t on t off unit: mm 1: gate 2: source 3: drain ssmini3-f1 package 0.27 0.02 3 12 0.12 +0.03 ?0.01 0.80 0.05 (0.80) 0.85 1.60 0.05 0 to 0.02 0.10 max. 0.70 +0.05 ?0.03 (0.375) 5? 5? 1.60 +0.05 ?0.03 1.00 0.05 (0.50)(0.50) +0.05 ?0.03 electrical characteristics t a = 25 c 3 c marking symbol: 5f note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * :t on , t off test circuit
2SK3546J 2 sjf00037aed ? y fs ? ? v gs r ds(on) ? v gs v in ? i o p d ? t a i d ? v ds i d ? v gs ambient temperature t a ( c) power dissipation p d (mw) 0 80 120 40 0 140 120 40 100 80 20 60 drain-source voltage v ds (v) drain current i d (ma) 70 60 50 40 30 20 10 0 24681012 0 t a = 25 c v gs = 2.5 v 2.4 v 2.3 v 2.2 v 2.1 v 2.0 v gate-source voltage v gs (v) drain current i d (ma) 250 200 150 100 50 0 1 234 6 5 0 v ds = 3 v t a = ? 25 c 25 c 85 c forward transfer admittance ? ? 1 1 1 1 1 = 3 v f = 1 khz t a = 25 c drain-source on resistance r ds(on) ( ? ) gate-source voltage v gs (v) 06 24 i d = 10 ma 0 60 50 40 30 20 10 t a = 85 c 25 c ? 25 c output current i o (ma) input voltage v in (v) 0.1 1 10 100 1 10 v o = 5 v t a = 25 c
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